Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy. Issue 7 (29th June 2015)

• Record Type: Journal Article
• Authors: Kot, Dawid; Kissinger, Gudrun; Schubert, Markus Andreas; Klingsporn, Max; Huber, Andreas; Sattler, Andreas
• Is Part Of: Physica status solidi. Volume 9:Issue 7(2015:Jul.)
• Page Start: 405
• Page End: 409
• Publication Date: 2015-06-29
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510194
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201510194-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>In this work, we investigated the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The thickness dependence of the Cliff–Lorimer sensitivity factor for the silicon/oxygen system was determined and applied for the investigation of the stoichiometry of oxygen precipitates by EDX. The results show that both plate‐like oxygen precipitates and a transitional form between plate‐like and octahedral precipi‐ tates consist of SiO₂. This was confirmed by EELS low loss spectra where the typical spectrum for amorphous SiO₂ was observed. Moreover, the absorption band of plate‐like precipitates at 1227 cm^–1 was found in the low temperature FTIR spectrum. It was demonstrated that this band can only be simulated by the dielectric constants of amorphous SiO₂. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>