Author/Creator: Sasaki, Kohei - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Sasaki, Kohei

21. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

22. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

23. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

24. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

25. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

26. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

27. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

28. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

29. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

30. Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

Authors:: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
Journal:: Applied physics express
Issue:: Volume 16:Number 3(2023)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗