Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1. (1st March 2023)

• Record Type: Journal Article
• Authors: Wakimoto, Daiki; Lin, Chia-Hung; Thieu, Quang Tu; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito
• Is Part Of: Applied physics express. Volume 16:Number 3(2023)
• Publication Date: 2023-03-01
• Subjects: β-Ga2O3 -- transistor -- normally-off -- nitrogen-doping; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/acc30e
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrate high-performance normally-off multi-fin β -Ga2 O3 vertical transistors with a wide fin width from 1.0 to 2.0 μ m by using a nitrogen-doped β -Ga2 O3 high-resistive layer grown by halide vapor phase epitaxy. Normally-off operation was achieved with a threshold voltage of ≥1.3 V, a specific on-resistance of 2.9 mΩ·cm 2 and a current density of 760 A cm −2 at a gate voltage of +10 V. The estimated MOS channel field effect mobility was ∼100 cm 2 V −1 s −1 . These findings offer important insights on the development of Ga2 O3 MOSFETs and show the great promise of Ga2 O3 vertical power devices.