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2. Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties. (16th June 2021)

3. Indirect stress and air-cavity displacement measurement of MEMS tunable VCSELs via micro-Raman and micro-photoluminescence spectroscopy. (28th January 2022)

4. Photoconductivity, carrier lifetime and mobility evaluation of GaAs films on Si (100) using optical pump terahertz probe measurements. (26th February 2019)

5. Thickness dependence of the spintronic terahertz emission from Ni/Pt bilayer grown on MgO via electron beam deposition. (19th August 2021)

6. Trilayer low-temperature-grown GaAs terahertz emitter and detector device with doped buffer. (5th August 2020)

7. Ultrafast carrier dynamics and THz conductivity in epitaxial-grown LT-GaAs on silicon for development of THz photoconductive antenna detectors. (20th December 2019)