Trilayer low-temperature-grown GaAs terahertz emitter and detector device with doped buffer. (5th August 2020)

• Record Type: Journal Article
• Authors: Prieto, Elizabeth Ann; De Los Reyes, Alexander; Vistro, Victor DC Andres; Cabello, Neil Irvin; Faustino, Maria Angela; Ferrolino, John Paul; Vasquez, John Daniel; Bardolaza, Hannah; Afalla, Jessica Pauline; Mag-usara, Valynn Katrine; Kitahara, Hideaki; Tani, Masahiko; Somintac, Armando; Salvador, Arnel; Estacio, Elmer
• Is Part Of: Applied physics express. Volume 13:Number 8(2020)
• Publication Date: 2020-08-05
• Subjects: Terahertz PCA Emitter and Detector -- Semiconductor Terahertz Device -- Low-temperature-grown GaAs; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/aba9a2
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A low-temperature-grown GaAs (LTG-GaAs) terahertz (THz) photoconductive antenna device with layer structure consisting of doped buffer demonstrated enhanced emission intensity and detection sensitivity. As THz emitter, a 116% increase is exhibited by the LTG-GaAs with doped buffer relative to its undoped counterpart at 9 V bias and 0.8 mW pump power with spectral distribution extending to ∼3 THz. As a THz detector, a dynamic range of 55 dB is obtained at 0.5 THz, which is 5 dB higher than its undoped counterpart. The device proved effective as a THz emitter at low operating bias and pump power while its detection characteristics are acceptable even at low incident THz powers.