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3. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides. (April 2021)

4. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm. (October 2021)

6. LASERS AND AMPLIFIERS : Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm. (26th March 2018)

7. Selection of papers presented at the Symposium 'Semiconductor Lasers: Physics and Technology' : AlGaInAs/InP semiconductor lasers with an increased electron barrier. (17th June 2019)

8. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide. (February 2021)