1. Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs. (June 2015) Authors: Koyama, M.; Cassé, M.; Barraud, S.; Ghibaudo, G.; Iwai, H.; Faynot, O.; Reimbold, G. Journal: Solid-state electronics Issue: Volume 108(2015) Page Start: 36 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction. (January 2018) Authors: Mohamad, B.; Leroux, C.; Reimbold, G.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 139(2018) Page Start: 88 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Drain current model for short-channel triple gate junctionless nanowire transistors. (August 2016) Authors: Paz, B.C.; Cassé, M.; Barraud, S.; Reimbold, G.; Faynot, O.; Ávila-Herrera, F.; Cerdeira, A.; Pavanello, M.A. Journal: Microelectronics and reliability Issue: Volume 63(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Drain current model for short-channel triple gate junctionless nanowire transistors. (August 2016) Authors: Paz, B.C.; Cassé, M.; Barraud, S.; Reimbold, G.; Faynot, O.; Ávila-Herrera, F.; Cerdeira, A.; Pavanello, M.A. Journal: Microelectronics and reliability Issue: Volume 63(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. (December 2017) Authors: Paz, B.C.; Doria, R.T.; Cassé, M.; Barraud, S.; Reimbold, G.; Vinet, M.; Faynot, O.; Pavanello, M.A. Journal: Microelectronics and reliability Issue: Volume 79(2017) Page Start: 111 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology. (February 2017) Authors: Mohamad, B.; Leroux, C.; Rideau, D.; Haond, M.; Reimbold, G.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model. (November 2016) Authors: Pelloux-Prayer, J.; Cassé, M.; Triozon, F.; Barraud, S.; Niquet, Y.-M.; Rouvière, J.-L.; Faynot, O.; Reimbold, G. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 175 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model. (November 2016) Authors: Pelloux-Prayer, J.; Cassé, M.; Triozon, F.; Barraud, S.; Niquet, Y.-M.; Rouvière, J.-L.; Faynot, O.; Reimbold, G. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 175 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes. (November 2015) Authors: Besnard, G.; Garros, X.; Andrieu, F.; Nguyen, P.; Van Den Daele, W.; Reynaud, P.; Schwarzenbach, W.; Delprat, D.; Bourdelle, K.K.; Reimbold, G.; Cristoloveanu, S. Journal: Solid-state electronics Issue: Volume 113(2015) Page Start: 127 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Underestimation of measured self‐heating in nanowires by using gate resistance technique. Issue 23 (1st November 2016) Authors: Mariniello, G.; Cassé, M.; Reimbold, G.; Pavanello, M.A. Journal: Electronics letters Issue: Volume 52:Issue 23(2016) Page Start: 1935 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗