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Author/Creator Regonda, Suresh

1. Source/drain eSiGe engineering for FinFET technology. (17th August 2017)

Authors:
Peng, Jianwei; Qi, Yi; Lo, Hsien-Ching; Zhao, Pei; Yong, Chloe; Yan, Jianghu; Dou, Xinyuan; Zhan, Hui; Shen, Yanping; Regonda, Suresh; Hu, Owen; Yu, Hong; Joshi, Manoj; Adams, Charlotte; Carter, Rick; Samavedam, Srikanth
Journal:
Semiconductor science and technology
Issue:
Volume 32:Number 9(2017:Sep.)
Page Start:
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

2. Trade-Off between Gate Oxide Integrity and Transistor Performance for FinFET Technology. (1st January 2017)

Authors:
Lo, Hsien-Ching; Peng, Jianwei; Yong, Chloe; Uppal, Suresh; Qi, Yi; Zhan, Hui; Shen, Yan Ping; Chen, Xiaobo; Yan, Jianghu; Zhu, Baofu; Shintri, Shashidhar; Yamaguchi, Shimpei; Bhat, Talapady; Hong, Wei; Shi, Yong Jun; Regonda, Suresh; Choi, Dongil; Hu, Owen; Joshi, Manoj; Samavedam, Srikanth
Journal:
ECS journal of solid state science and technology
Issue:
Volume 6:Number 8(2017)
Page Start:
N137
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. Trade-Off between Gate Oxide Integrity and Transistor Performance for FinFET Technology. (3rd August 2017)

Authors:
Lo, Hsien-Ching; Peng, Jianwei; Yong, Chloe; Uppal, Suresh; Qi, Yi; Zhan, Hui; Shen, Yan Ping; Chen, Xiaobo; Yan, Jianghu; Zhu, Baofu; Shintri, Shashidhar; Yamaguchi, Shimpei; Bhat, Talapady; Hong, Wei; Shi, Yong Jun; Regonda, Suresh; Choi, Dongil; Hu, Owen; Joshi, Manoj; Samavedam, Srikanth
Journal:
ECS journal of solid state science and technology
Issue:
Volume 6:Number 8(2017)
Page Start:
N137
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗