1. A simple test structure for the electrical characterization of front and back channels for advanced SOI technology development. (November 2021) Authors: Alepidis, M.; Ionica, I.; Milesi, F.; Bresson, N.; Gaudin, G.; Cristoloveanu, S.; Reboh, S. Journal: Solid-state electronics Issue: Volume 185(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Converting SOI to sSOI through Amorphization and Crystallization: Material Analysis and Device Demonstration. (1st January 2015) Authors: Maitrejean, S.; Loubet, N.; Augendre, E.; Morin, P.; Reboh, S.; Bernier, N.; Wacquez, R.; Lherron, B.; Bonnevialle, A.; Liu, Q.; Hartmann, J. M.; He, H.; Halimaoui, A.; Li, J.; Pilorget, S.; Kanyandekwe, J.; Grenouillet, L.; Chafik, F.; Morand, Y.; Royer, C. Le Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 9(2015) Page Start: P376 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Converting SOI to sSOI through Amorphization and Crystallization: Material Analysis and Device Demonstration. (25th August 2015) Authors: Maitrejean, S.; Loubet, N.; Augendre, E.; Morin, P.; Reboh, S.; Bernier, N.; Wacquez, R.; Lherron, B.; Bonnevialle, A.; Liu, Q.; Hartmann, J. M.; He, H.; Halimaoui, A.; Li, J.; Pilorget, S.; Kanyandekwe, J.; Grenouillet, L.; Chafik, F.; Morand, Y.; Royer, C. Le Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 9(2015) Page Start: P376 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Modelling of point defect complex formation and its application to H+ ion implanted silicon. (15th October 2015) Authors: Cherkashin, N.; Darras, F.-X.; Pochet, P.; Reboh, S.; Ratel-Ramond, N.; Claverie, A. Journal: Acta materialia Issue: Volume 99(2015) Page Start: 187 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Modelling of point defect complex formation and its application to H+ ion implanted silicon. (15th October 2015) Authors: Cherkashin, N.; Darras, F.-X.; Pochet, P.; Reboh, S.; Ratel-Ramond, N.; Claverie, A. Journal: Acta materialia Issue: Volume 99(2015) Page Start: 187 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices. Issue 10 (9th August 2016) Authors: Bonnevialle, A.; Reboh, S.; Le Royer, C.; Morand, Y.; Hartmann, J.‐M.; Rouchon, D.; Pedini, J.‐M.; Tabone, C.; Rambal, N.; Payet, A.; Plantier, C.; Boeuf, F.; Haond, M.; Claverie, A.; Vinet, M. Journal: Physica status solidi Issue: Volume 13:Issue 10-12(2016) Page Start: 740 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗