Converting SOI to sSOI through Amorphization and Crystallization: Material Analysis and Device Demonstration. (1st January 2015)

• Record Type: Journal Article
• Authors: Maitrejean, S.; Loubet, N.; Augendre, E.; Morin, P.; Reboh, S.; Bernier, N.; Wacquez, R.; Lherron, B.; Bonnevialle, A.; Liu, Q.; Hartmann, J. M.; He, H.; Halimaoui, A.; Li, J.; Pilorget, S.; Kanyandekwe, J.; Grenouillet, L.; Chafik, F.; Morand, Y.; Royer, C. Le; Faynot, O.; Celik, M.; Doris, B.; De Salvo, B.
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 9(2015)
• Page Start: P376
• Page End: P381
• Publication Date: 2015-01-01
• Subjects: amorphization -- FDSOI -- sSOI -- UTBB; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0171509jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Here, we demonstrate a new process to fabricate tensily strained Si On Insulator substrates (sSOI). The process is based on the epitaxial growth of Si1-x Gex on SOI substrate, the partial amorphization and crystallization of the Si/Si1-x Gex bilayers and the selective removal of the top Si1-x Gex film. Si tensile stress higher than 1.4 GPa is obtained. Complementary Metal Oxide Semiconductor Fully Depleted-SOI (CMOS FD-SOI) devices, with gate length lower than 15 nm, were fabricated on top of such substrate. For nFET devices, improvement in mobility is demonstrated with respect to devices built on standard SOI substrates.