1. A Gaussian approach for analytical subthreshold current model of cylindrical nanowire FET with quantum mechanical effects. (July 2016) Authors: Sharma, Sanjeev Kumar; Raj, Balwinder; Khosla, Mamta Journal: Microelectronics journal Issue: Volume 53(2016) Page Start: 65 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A low leakage TG‐CNTFET–based inexact full adder for low power image processing applications. (18th July 2019) Authors: Goyal, Candy; Ubhi, Jagpal Singh; Raj, Balwinder Journal: International journal of circuit theory and applications Issue: Volume 47:Number 9(2019) Page Start: 1446 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A Reliable Leakage Reduction Technique for Approximate Full Adder with Reduced Ground Bounce Noise. (16th December 2018) Authors: Goyal, Candy; Ubhi, Jagpal Singh; Raj, Balwinder Other Names: Sabbagh Molahosseini Amir Academic Editor. Journal: Mathematical problems in engineering Issue: Volume 2018(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. An analytical modeling of charge plasma based Tunnel Field Effect Transistor with impacts of gate underlap region. (June 2020) Authors: Wadhwa, Girish; Raj, Balwinder Journal: Superlattices and microstructures Issue: Volume 142(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Analysis and performance exploration of high performance (HfO2) SOI FinFETs over the conventional (Si3N4) SOI FinFET towards analog/RF design. (December 2018) Authors: Jain, Neeraj; Raj, Balwinder Journal: Journal of semiconductors Issue: Volume 39:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Compact model for ballistic single wall CNTFET under quantum capacitance limit. (October 2016) Authors: Singh, Amandeep; Khosla, Mamta; Raj, Balwinder Journal: Journal of semiconductors Issue: Volume 37:Number 10(2016:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Comparative analysis of memristor models and memories design. (July 2018) Authors: Singh, Jeetendra; Raj, Balwinder Journal: Journal of semiconductors Issue: Volume 39:Number 7(2018:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Comparative analysis of photovoltaic technologies for high efficiency solar cell design. (May 2021) Authors: Sharma, Divya; Mehra, Rajesh; Raj, Balwinder Journal: Superlattices and microstructures Issue: Volume 153(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects. Issue 6 (28th February 2021) Authors: Kaur, Manjit; Gupta, Neena; Kumar, Sanjeev; Raj, Balwinder; Singh, Arun K. Journal: IET circuits, devices & systems Issue: Volume 15:Issue 6(2021) Page Start: 493 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor. (August 2021) Authors: Chawla, Tulika; Khosla, Mamta; Raj, Balwinder Journal: Microelectronics journal Issue: Volume 114(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗