1. Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs. (20th September 2021) Authors: van Deurzen, Len; Gómez Ruiz, Mikel; Lee, Kevin; Turski, Henryk; Bharadwaj, Shyam; Page, Ryan; Protasenko, Vladimir; Xing, Huili (Grace); Lähnemann, Jonas; Jena, Debdeep Journal: Journal of physics Issue: Volume 54:Number 49(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. High-quality InN films on GaN using graded InGaN buffers by MBE. (25th April 2016) Authors: Islam, SM; Protasenko, Vladimir; Rouvimov, Sergei; Xing, Huili (Grace); Jena, Debdeep Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Influence of collector doping setback in the quantum transport characteristics of GaN/AlN resonant tunneling diodes. (12th November 2021) Authors: Encomendero, Jimy; Protasenko, Vladimir; Jena, Debdeep; Xing, Huili Grace Journal: Applied physics express Issue: Volume 14:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Sub-230 nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski–Krastanov mode. (25th April 2016) Authors: Islam, SM; Protasenko, Vladimir; Rouvimov, Sergei; Xing, Huili (Grace); Jena, Debdeep Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗