Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs. (20th September 2021)
- Record Type:
- Journal Article
- Title:
- Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs. (20th September 2021)
- Main Title:
- Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs
- Authors:
- van Deurzen, Len
Gómez Ruiz, Mikel
Lee, Kevin
Turski, Henryk
Bharadwaj, Shyam
Page, Ryan
Protasenko, Vladimir
Xing, Huili (Grace)
Lähnemann, Jonas
Jena, Debdeep - Abstract:
- Abstract: This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet potassium hydroxide etching, the identified inhomogeneities are found to fall in four categories. Labeled here as type I through IV, they are distinguishable by their size, density, energy, intensity, radiative and electronic characteristics and chemical etch pits which correlates them with dislocations. Type I exhibits a blueshift of about 120 meV for the InGaN quantum well emission attributed to a perturbation of the active region, which is related to indium droplets that form on the surface in the metal-rich InGaN growth condition. Specifically, we attribute the blueshift to a decreased growth rate of and indium incorporation in the InGaN quantum wells underneath the droplet which is postulated to be the result of reduced incorporated N species due to increased N2 formation. The location of droplets are correlated with mixed type dislocations for type I defects. Types II through IV are due to screw dislocations, edge dislocations, and dislocation bunching, respectively, and form dark spots due to leakage current and nonradiative recombination.
- Is Part Of:
- Journal of physics. Volume 54:Number 49(2021)
- Journal:
- Journal of physics
- Issue:
- Volume 54:Number 49(2021)
- Issue Display:
- Volume 54, Issue 49 (2021)
- Year:
- 2021
- Volume:
- 54
- Issue:
- 49
- Issue Sort Value:
- 2021-0054-0049-0000
- Page Start:
- Page End:
- Publication Date:
- 2021-09-20
- Subjects:
- InGaN -- GaN -- LED -- dislocations -- indium droplets -- inhomogeneities -- internal quantum efficiency
Physics -- Periodicals
530 - Journal URLs:
- http://ioppublishing.org/ ↗
http://iopscience.iop.org/0022-3727 ↗ - DOI:
- 10.1088/1361-6463/ac2446 ↗
- Languages:
- English
- ISSNs:
- 0022-3727
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 19010.xml