High-quality InN films on GaN using graded InGaN buffers by MBE. (25th April 2016)

• Record Type: Journal Article
• Authors: Islam, SM; Protasenko, Vladimir; Rouvimov, Sergei; Xing, Huili (Grace); Jena, Debdeep
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 5(2016:May)Supplement
• Publication Date: 2016-04-25
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.05FD12
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The growth of high-quality thick InN films is challenging because of the lack of native substrates. In this work, we demonstrate the use of a linearly graded InGaN buffer layer for the growth of InN films on GaN substrates. A 500 nm InN film with <0.1 nm RMS roughness is obtained with a peak mobility of 1410 cm 2 /(V·s) at 300 K. A strong room temperature photoluminescence showing a bandgap of 0.65 eV with 79 meV linewidth is observed. A graded InGaN buffer is found to lead to extremely smooth and high-quality InN films.