1. Band alignment in ZrSiO4/ZnO heterojunctions. (March 2016) Authors: Hays, David C.; Gila, B.P.; Pearton, S.J.; Kim, Byung-Jae; Ren, F. Journal: Vacuum Issue: Volume 125(2016) Page Start: 113 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Band alignment in ZrSiO4/ZnO heterojunctions. (March 2016) Authors: Hays, David C.; Gila, B.P.; Pearton, S.J.; Kim, Byung-Jae; Ren, F. Journal: Vacuum Issue: Volume 125(2016) Page Start: 113 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Band alignment of Al2O3 with (−201) β-Ga2O3. (August 2017) Authors: Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B.P.; Pearton, S.J.; Jang, Soohwan; Kuramata, Akito Journal: Vacuum Issue: Volume 142(2017) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions. (February 2017) Authors: Hays, David C.; Gila, B.P.; Pearton, S.J.; Thorpe, Ryan; Ren, F. Journal: Vacuum Issue: Volume 136(2017) Page Start: 137 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Device processing and junction formation needs for ultra-high power Ga2O3 electronics. (29th January 2019) Authors: Ren, Fan; Yang, J.C.; Fares, Chaker; Pearton, S.J. Journal: MRS communications Issue: Volume 9:Number 1(2019) Page Start: 77 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effects of radiation damage in GaN and related materials. (16th July 2008) Authors: Pearton, S.J.; Polyakov, A.Y. Journal: International journal of materials and structural integrity Issue: Volume 2:Number 1/2(2008) Page Start: 93 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. (March 2017) Authors: Whiting, P.G.; Holzworth, M.R.; Lind, A.G.; Pearton, S.J.; Jones, K.S.; Liu, L.; Kang, T.S.; Ren, F.; Xin, Y. Journal: Microelectronics and reliability Issue: Volume 70(2017) Page Start: 32 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts. (March 2017) Authors: Whiting, P.G.; Rudawski, N.G.; Holzworth, M.R.; Pearton, S.J.; Jones, K.S.; Liu, L.; Kang, T.S.; Ren, F. Journal: Microelectronics and reliability Issue: Volume 70(2017) Page Start: 41 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Retraction notice to "Recent progress in processing and properties of ZnO" [Prog. Mater. Sci. 50(3) (2004) 293–340]. (February 2021) Authors: Pearton, S.J.; Norton, D.P.; Ip, K.; Heo, Y.W.; Steiner, T. Journal: Progress in materials science Issue: Volume 116(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Valence and conduction band offsets in AZO/Ga2O3 heterostructures. (July 2017) Authors: Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B.P.; Pearton, S.J.; Jang, Soohwan; Kuramata, Akito Journal: Vacuum Issue: Volume 141(2017) Page Start: 103 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗