Effects of radiation damage in GaN and related materials. (16th July 2008)

• Record Type: Journal Article
• Authors: Pearton, S.J.; Polyakov, A.Y.
• Is Part Of: International journal of materials and structural integrity. Volume 2:Number 1/2(2008)
• Page Start: 93
• Page End: 105
• Publication Date: 2008-07-16
• Subjects: GaN -- gallium nitride -- radiation damage -- traps -- neutrons -- protons -- electrons -- gamma rays -- high electron mobility transistors -- HEMTs -- light-emitting diodes -- LEDs -- mobility -- irradiation; Materials -- Testing -- Periodicals; Strength of materials -- Periodicals; Structural dynamics -- Periodicals; Structural analysis (Engineering) -- Periodicals; 620.112
• Languages: English
• ISSNs: 1745-0055

Abstract

A brief review of the effects of proton, neutron, γ-ray and electron irradiation of GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the conductivity of the GaN and at high enough doses, a severe degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs.