1. Anomalous random telegraph noise and temporary phenomena in resistive random access memory. (November 2016) Authors: Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 204 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Anomalous random telegraph noise and temporary phenomena in resistive random access memory. (November 2016) Authors: Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 204 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs. (September 2019) Authors: Zagni, Nicolò; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni Journal: Solid-state electronics Issue: Volume 159(2019) Page Start: 135 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Selected papers from ESSDERC 2014. (November 2015) Authors: Bez, Roberto; Meneghesso, Gaudenzio; Pavan, Paolo; Zanoni, Enrico Journal: Solid-state electronics Issue: Volume 113(2015) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing. (August 2022) Authors: De Rose, Raffaele; Zanotti, Tommaso; Puglisi, Francesco Maria; Crupi, Felice; Pavan, Paolo; Lanuzza, Marco Journal: Solid-state electronics Issue: Volume 194(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS. (November 2015) Authors: Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea Journal: Solid-state electronics Issue: Volume 113(2015) Page Start: 132 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing. (October 2021) Authors: De Rose, Raffaele; Zanotti, Tommaso; Puglisi, Francesco Maria; Crupi, Felice; Pavan, Paolo; Lanuzza, Marco Journal: Solid-state electronics Issue: Volume 184(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗