1. Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters. Issue 3 (5th February 2015) Authors: Potier, Clément; Jacquet, Jean-Claude; Dua, Christian; Martin, Audrey; Campovecchio, Michel; Oualli, Mourad; Jardel, Olivier; Piotrowicz, Stéphane; Laurent, Sylvain; Aubry, Raphaël; Patard, Olivier; Gamarra, Piero; di Forte-Poisson, Marie-Antoinette; Delage, Sylvain L.; Quéré, Raymond Editors: Perregrini, Luca; Colantonio, Paolo; Berizzi, Fabrizio Journal: International journal of microwave and wireless technologies Issue: Volume 7:Issue 3/4(2015) Page Start: 287 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications. Issue 1 (27th November 2017) Authors: Piotrowicz, Stéphane; Jacquet, Jean-Claude; Gamarra, Piero; Patard, Olivier; Dua, Christian; Chartier, Eric; Michel, Nicolas; Oualli, Mourad; Lacam, Cedric; Potier, Clément; Altuntas, Philippe; Delage, Sylvain Editors: Fourn, Erwan Journal: International journal of microwave and wireless technologies Issue: Volume 10:Issue 1(2018) Page Start: 39 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT. (12th June 2018) Authors: Bourlier, Y.; Bouttemy, M.; Patard, Olivier; Gamarra, Piero; Piotrowicz, S.; Vigneron, J.; Aubry, R.; Delage, S.; Etcheberry, A. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 6(2018) Page Start: P329 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT. (1st January 2018) Authors: Bourlier, Y.; Bouttemy, M.; Patard, Olivier; Gamarra, Piero; Piotrowicz, S.; Vigneron, J.; Aubry, R.; Delage, S.; Etcheberry, A. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 6(2018) Page Start: P329 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy. (26th June 2020) Authors: Bourlier, Yoan; Bouttemy, Muriel; Fregnaux, Mathieu; Patard, Olivier; Gamarra, Piero; Piotrowicz, Stephane; Delage, Sylvain; Etcheberry, Arnaud Other Names: Oswald Steffen guestEditor.; Watts John F. guestEditor.; Abel Marie‐Laure guestEditor. Journal: Surface and interface analysis Issue: Volume 52:Number 12(2020) Page Start: 914 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗