In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy. (26th June 2020)

• Record Type: Journal Article
• Authors: Bourlier, Yoan; Bouttemy, Muriel; Fregnaux, Mathieu; Patard, Olivier; Gamarra, Piero; Piotrowicz, Stephane; Delage, Sylvain; Etcheberry, Arnaud
• Other Names: Oswald Steffen guestEditor.; Watts John F. guestEditor.; Abel Marie‐Laure guestEditor.
• Is Part Of: Surface and interface analysis. Volume 52:Number 12(2020)
• Page Start: 914
• Page End: 918
• Publication Date: 2020-06-26
• Subjects: Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6857
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : During high‐electron‐mobility transistor elaboration process, a thermal treatment of In0.2 Al0.8 N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In0.2 Al0.8 N/GaN heterostructures, annealed at 850°C under O2 partial pressure, present a specific in‐depth organization. Angle‐resolved X‐ray photoelectron spectroscopy is a powerful tool to precisely determine the spatial localization and relative position of the different interfaces, from InAlN until buried GaN layer. The proposed in‐depth model of the stack evidences (1) an Al‐rich surface oxide with embedded N2 molecules, (2) an interlayer of InAlN<1 governed by nitrogen lattice defects, (3) a stable In0.2 Al0.8 N matrix, and finally (4) the GaN buffer layer underneath.