Author/Creator: Padalitsa, A A - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Padalitsa, A A

1. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier. (December 2020)

Authors:: Svetogorov, V N; Ryaboshtan, Yu L; Ladugin, M A; Padalitsa, A A; Volkov, N A; Marmalyuk, A A; Slipchenko, S O; Lyutetskii, A V; Veselov, D A; Pikhtin, N A
Journal:: Quantum electronics
Issue:: Volume 50:Number 12(2020)
Page Start:: 1123
Record Type:: Journal Article
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2. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides. (April 2021)

Authors:: Volkov, N A; Svetogorov, V N; Ryaboshtan, Yu L; Andreev, A Yu; Yarotskaya, I V; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Slipchenko, S O; Lyutetskii, A V; Veselov, D A; Pikhtin, N A
Journal:: Quantum electronics
Issue:: Volume 51:Number 4(2021)
Page Start:: 283
Record Type:: Journal Article
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3. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm. (October 2021)

Authors:: Svetogorov, V N; Ryaboshtan, Yu L; Volkov, N A; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Bakhvalov, K V; Veselov, D A; Lyutetskii, A V; Strelets, V A; Slipchenko, S O; Pikhtin, N A
Journal:: Quantum electronics
Issue:: Volume 51:Number 10(2021)
Page Start:: 909
Record Type:: Journal Article
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4. Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm). (February 2022)

Authors:: Volkov, N A; Telegin, K Yu; Gul'tikov, N V; Sabitov, D R; Andreev, A Yu; Yarotskaya, I V; Padalitsa, A A; Ladugin, M A; Marmalyuk, A A; Shestak, L I; Kozyrev, A A; Panarin, V A
Journal:: Quantum electronics
Issue:: Volume 52:Number 2(2022)
Page Start:: 179
Record Type:: Journal Article
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5. InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics. (October 2021)

Authors:: Volkov, N A; Bagaev, T A; Sabitov, D R; Andreev, A Yu; Yarotskaya, I V; Padalitsa, A A; Ladugin, M A; Marmalyuk, A A; Bakhvalov, K V; Veselov, D A; Lyutetskii, A V; Rudova, N A; Strelets, V A; Slipchenko, S O; Pikhtin, N A
Journal:: Quantum electronics
Issue:: Volume 51:Number 10(2021)
Page Start:: 905
Record Type:: Journal Article
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6. LASERS : Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%. (31st August 2017)

Authors:: Ladugin, M A; Marmalyuk, A A; Padalitsa, A A; Telegin, K Yu; Lobintsov, A V; Sapozhnikov, S M; Danilov, A I; Podkopaev, A V; Simakov, V A
Journal:: Quantum electronics
Issue:: Volume 47:Number 8(2017)
Page Start:: 693
Record Type:: Journal Article
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7. LASERS : Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD. (1st June 2016)

Authors:: Zasavitskii, I I; Zubov, A N; Andreev, A Yu; Bagaev, T A; Gorlachuk, P V; Ladugin, M A; Padalitsa, A A; Lobintsov, A V; Sapozhnikov, S M; Marmalyuk, A A
Journal:: Quantum electronics
Issue:: Volume 46:Number 5(2016)
Page Start:: 447
Record Type:: Journal Article
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8. LASERS : Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides. (31st March 2017)

Authors:: Marmalyuk, A A; Ryaboshtan, Yu L; Gorlachuk, P V; Ladugin, M A; Padalitsa, A A; Slipchenko, S O; Lyutetskiy, A V; Veselov, D A; Pikhtin, N A
Journal:: Quantum electronics
Issue:: Volume 47:Number 3(2017)
Page Start:: 272
Record Type:: Journal Article
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9. Lasers : Superluminescent diodes of the 770–790-nm range based on semiconductor nanostructures with narrow quantum wells. (19th September 2019)

Authors:: Anikeev, A S; Bagaev, T A; Il'chenko, S N; Ladugin, M A; Marmalyuk, A A; Padalitsa, A A; Pankratov, K M; Shidlovskii, V R; Yakubovich, S D
Journal:: Quantum electronics
Issue:: Volume 49:Number 9(2019)
Page Start:: 810
Record Type:: Journal Article
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10. Lasers : Triple integrated laser–thyristor. (30th November 2020)

Authors:: Bagaev, T A; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Kurnyavko, Yu V; Lobintsov, A V; Danilov, A I; Sapozhnikov, S M; Krichevskii, V V; Konyaev, V P; Simakov, V A; Slipchenko, S O; Podoskin, A A; Pikhtin, N A
Journal:: Quantum electronics
Issue:: Volume 50:Number 11(2020)
Page Start:: 1001
Record Type:: Journal Article
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