1. Annealing of the sputtered AlN buffer layer on r‐plane sapphire and its effect on a‐plane GaN crystalline quality. Issue 8 (17th July 2017) Authors: Jinno, Daiki; Otsuki, Shunya; Niimi, Teruyuki; Sugimori, Shogo; Daicho, Hisayoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by metalorganic vapor phase epitaxy. (22nd May 2019) Authors: Otsuki, Shunya; Jinno, Daiki; Daicho, Hisayoshi; Kamiyama, Satoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Akasaki, Isamu Journal: Japanese journal of applied physics Issue: Volume 58:Number SC(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗