Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by metalorganic vapor phase epitaxy. (22nd May 2019)

• Record Type: Journal Article
• Authors: Otsuki, Shunya; Jinno, Daiki; Daicho, Hisayoshi; Kamiyama, Satoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Akasaki, Isamu
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SC(2019)
• Publication Date: 2019-05-22
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab07aa
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Typical multi quantum well (MQW) grown on nonpolar a-plane GaN templates shows many pits composed of several semipolar planes, and these pits emit at different wavelengths due to the variation of indium incorporations into the QW. In this study, a surface-recovery GaN layer and high-temperature grown barrier were introduced to improve the a-plane MQW quality. We succeeded in decreasing the pits prior to the MQW growth and improving the interfaces of MQW. The structural and optical properties of the MQW were significantly improved.