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4. High‐efficiency yellow light‐emitting diodes grown on sapphire (0001) substrates. Issue 3 (17th February 2014)

6. Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface. Issue 10 (19th December 2017)

8. Reduction of threading dislocation by recoating GaN island surface with SiN for high‐efficiency GaN‐on‐Si‐based LED. Issue 3 (28th January 2014)