Fabrication and characteristics of high‐power multijunction LEDs using GaN‐on‐Si technologies. Issue 5 (9th March 2016)

• Record Type: Journal Article
• Authors: Tajima, Jumpei; Ono, Hiroshi; Ito, Toshihide; Uesugi, Kenjiro; Nunoue, Shinya
• Is Part Of: Physica status solidi. Volume 213:Issue 5(2016:May)
• Page Start: 1177
• Page End: 1180
• Publication Date: 2016-03-09
• Subjects: GaN -- high‐power light‐emitting diodes -- silicon; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532776
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : GaN‐based multijunction light‐emitting diodes (MJ‐LEDs) capable of operating at high voltage and high power were fabricated. The device structure of the MJ‐LEDs was based on a thin‐film flip‐chip LED and consisted of several junctions connected in series. High‐voltage operation and uniform electroluminescence were achieved in the MJ‐LEDs whose chip size was from 1.5 to 2.5‐mm‐square. Under a driving power of 5.8 W, the light output power of a 12‐junction LED was over 3.1 W with encapsulation. A white lamp based on the MJ‐LED and a YAG:Ce phosphor exhibited a luminous efficacy of 111 lm W −1 in 6.1 W operations when the stage temperature was 85 °C.