Determination of band profiles in GaN films using hard X-ray photoelectron spectroscopy. (25th January 2017)

• Record Type: Journal Article
• Authors: Saito, Shinji; Yoshiki, Masahiko; Nunoue, Shinya; Sano, Nobuyuki
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 2(2017)
• Publication Date: 2017-01-25
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.021003
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We investigated band-profile control by introducing interlayers between a semiconductor and metal contact layers to improve the electrical properties of GaN-based semiconductor devices. We evaluated the electronic structure of the semiconductor surface and the metal/semiconductor interface by hard X-ray photoelectron spectroscopy. We also performed Monte Carlo simulations using the Boltzmann transport equation under the potential profile obtained using the Poisson equation. The band profile in the semiconductor substrate was then examined by comparing the energy spectra from the simulations with those from the experiments. We obtained good agreement between the two results. The present experimental and theoretical methods allow one to determine the band profile near the surface of a semiconductor as well as that in a metal interface. This approach may become a useful tool in the design and/or evaluation of processing conditions.