1. A non‐destructive approach for doping profiles characterization by micro‐Raman spectroscopy: the case of B‐implanted Ge. (16th January 2014) Authors: Sanson, A.; Napolitani, E.; Carnera, A.; Impellizzeri, G.; Giarola, M.; Mariotto, G. Journal: Journal of Raman spectroscopy Issue: Volume 45:Number 2(2014:Feb.) Page Start: 197 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effects of atmospheric pressure plasma JET treatment on aluminium alloys. (September 2014) Authors: Brunelli, K.; Pezzato, L.; Napolitani, E.; Gross, S.; Magrini, M.; Dabalà, M. Journal: Surface engineering Issue: Volume 30:Number 9(2014) Page Start: 636 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2. Issue 1 (11th December 2017) Authors: Arduca, E.; Seguini, G.; Martella, C.; Lamperti, A.; Napolitani, E.; De Salvador, D.; Nicotra, G.; Scuderi, M.; Spinella, C.; Perego, M. Journal: Journal of materials chemistry Issue: Volume 6:Issue 1(2017) Page Start: 119 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy. (May 2017) Authors: Sanson, A.; El Mubarek, H.A.W.; Gandy, A.S.; De Salvador, D.; Napolitani, E.; Carnera, A. Journal: Materials science in semiconductor processing Issue: Volume 62(2017) Page Start: 205 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Indiffusion of oxygen in germanium induced by pulsed laser melting. (December 2018) Authors: Milazzo, R.; Linser, M.; Scarpa, D.; Carnera, A.; Andrighetto, A.; Napolitani, E. Journal: Materials science in semiconductor processing Issue: Volume 88(2018) Page Start: 93 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches. (May 2017) Authors: Lombardo, S.F.; Boninelli, S.; Cristiano, F.; Fisicaro, G.; Fortunato, G.; Grimaldi, M.G.; Impellizzeri, G.; Italia, M.; Marino, A.; Milazzo, R.; Napolitani, E.; Privitera, V.; La Magna, A. Journal: Materials science in semiconductor processing Issue: Volume 62(2017) Page Start: 80 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Oxygen behavior in germanium during melting laser thermal annealing. (February 2016) Authors: Milazzo, R.; Impellizzeri, G.; Cuscunà, M.; De Salvador, D.; Mastromatteo, M.; La Magna, A.; Fortunato, G.; Priolo, F.; Privitera, V.; Carnera, A.; Napolitani, E. Journal: Materials science in semiconductor processing Issue: Volume 42:Part 2(2016:Feb.) Page Start: 196 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide. (12th June 2014) Authors: Mastromatteo, M.; Arduca, E.; Napolitani, E.; Nicotra, G.; De Salvador, D.; Bacci, L.; Frascaroli, J.; Seguini, G.; Scuderi, M.; Impellizzeri, G.; Spinella, C.; Perego, M.; Carnera, A.; Lee, Yeonhee; Moon, DaeWon; Kang, Hee Jae; Kim, Kyung Joong; Lee, Tae Geol; Lee, Jae Cheol; Yi, Keewook Journal: Surface and interface analysis Issue: Volume 46:Number 1(2014:Jan.) Page Start: 393 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Role of ion mass on damage accumulation during ion implantation in Ge. Issue 1 (29th November 2013) Authors: Napolitani, E.; Bruno, E.; Bisognin, G.; Mastromatteo, M.; De Salvador, D.; Scapellato, G. G.; Boninelli, S.; Priolo, F.; Privitera, V.; Carnera, A. Journal: Physica status solidi Issue: Volume 211:Issue 1(2014:Jan.) Page Start: 118 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Role of oxygen on the electrical activation of B in Ge by excimer laser annealing. Issue 1 (13th December 2013) Authors: Impellizzeri, G.; Napolitani, E.; Milazzo, R.; Boninelli, S.; Cuscunà, M.; Fisicaro, G.; La Magna, A.; Fortunato, G.; Priolo, F.; Privitera, V. Journal: Physica status solidi Issue: Volume 211:Issue 1(2014:Jan.) Page Start: 122 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗