Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy. (May 2017)

• Record Type: Journal Article
• Authors: Sanson, A.; El Mubarek, H.A.W.; Gandy, A.S.; De Salvador, D.; Napolitani, E.; Carnera, A.
• Is Part Of: Materials science in semiconductor processing. Volume 62(2017)
• Page Start: 205
• Page End: 208
• Publication Date: 2017-05
• Subjects: Fluorine-implanted germanium -- XANES -- Vacancy complexes; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.10.007
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The local structure of fluorine incorporated in crystalline germanium by ion implantation and annealing has been investigated by x-ray absorption near edge structure (XANES) spectroscopy. The XANES spectra of different Fm Vn complexes have been simulated by ab initio calculations and compared with the experimental spectrum. In our study, we show that most of the F in Ge forms F6 V2 complexes, lengthening the Ge–Ge distances in the close proximity.