1. Direct Wafer Bonding of SiC-SiC at Room Temperature by SAB Method. (24th August 2016) Authors: Mu, Fengwen; Iguchi, Kenichi; Nakazawa, Haruo; Takahashi, Yoshikazu; Fujino, Masahisa; Suga, Tadatomo Journal: ECS transactions Issue: Volume 75:Number 9(2016) Page Start: 77 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere. Issue 1591 (17th March 2014) Authors: Nakazawa, Haruo; Ogino, Masaaki; Teranishi, Hideaki; Takahashi, Yoshikazu; Habuka, Hitoshi Journal: MRS proceedings Issue: Issue 1591:(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Room-temperature wafer bonding of SiC–Si by modified surface activated bonding with sputtered Si nanolayer. (18th March 2016) Authors: Mu, Fengwen; Iguchi, Kenichi; Nakazawa, Haruo; Takahashi, Yoshikazu; Fujino, Masahisa; Suga, Tadatomo Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Silicon carbide wafer bonding by modified surface activated bonding method. (15th January 2015) Authors: Suga, Tadatomo; Mu, Fengwen; Fujino, Masahisa; Takahashi, Yoshikazu; Nakazawa, Haruo; Iguchi, Kenichi Journal: Japanese journal of applied physics Issue: Volume 54:Number 3(2015:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗