Author/Creator: Mo, Jianghui - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Mo, Jianghui

1. Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs*Project supported by the National Natural Science Foundation of China (No. 61275107). (August 2015)

Authors:: Wang, Zhiming; Zhao, Zhuobin; Hu, Zhifu; Huang, Hui; Cui, Yuxing; Sun, Xiguo; Mo, Jianghui; Li, Liang; Fu, Xingchang; Lü, Xin
Journal:: Journal of semiconductors
Issue:: Volume 36:Number 8(2015:Aug.)
Page Start:: 24
Record Type:: Journal Article
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2. Design of high breakdown voltage GaN vertical HFETs with p-GaN buried buffer layers for power switching applications. (July 2015)

Authors:: Du, Jiangfeng; Liu, Dong; Zhao, Ziqi; Bai, Zhiyuan; Li, Liang; Mo, Jianghui; Yu, Qi
Journal:: Superlattices and microstructures
Issue:: Volume 83(2015)
Page Start:: 251
Record Type:: Journal Article
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3. Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz. (1st February 2015)

Authors:: Wang, Zhiming; Lü, Xin; Luo, Xiaobin; Cui, Yuxing; Sun, Xiguo; Mo, Jianghui; Fu, Xingchang; Li, Liang; He, Dawei
Journal:: Journal of semiconductors
Issue:: Volume 36:Number 2(2015:Feb.)
Page Start:: 024005
Record Type:: Journal Article
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4. High breakdown voltage AlGaN/GaN HEMT with high‐K/low‐K compound passivation. Issue 1 (1st January 2015)

Authors:: Du, Jiangfeng; Chen, Nanting; Pan, Peilin; Bai, Zhiyuan; Li, Liang; Mo, Jianghui; Yu, Qi
Journal:: Electronics letters
Issue:: Volume 51:Issue 1(2015)
Page Start:: 104
Record Type:: Journal Article
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5. Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique. (March 2021)

Authors:: Li, Mengjun; Wang, Jinyan; Zhang, Bin; Tao, Qianqian; Wang, Hongyue; Cao, Qirui; Huang, Chengyu; Liu, Jingqian; Mo, Jianghui; Wu, Wengang; Cai, Shujun
Journal:: Solid-state electronics
Issue:: Volume 177(2021)
Page Start:
Record Type:: Journal Article
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6. Improved performance of enhancement-mode GaN MIS-FET based on a self-terminating gate recess etching technique with in situ NH3 pre-treatment. (1st January 2023)

Authors:: Zhang, Bin; Wang, Jinyan; Li, Mengjun; Huang, Chengyu; He, Jiayin; Wang, Xin; Wang, Chen; Wang, Hongyue; Mo, Jianghui; Wang, Maojun; Wu, Wengang
Journal:: Japanese journal of applied physics
Issue:: Volume 62:Number 1(2023)
Page Start:
Record Type:: Journal Article
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7. Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs. (May 2018)

Authors:: Lv, Yuanjie; Mo, Jianghui; Song, Xubo; He, Zezhao; Wang, Yuangang; Tan, Xin; Zhou, Xingye; Gu, Guodong; Guo, Hongyu; Feng, Zhihong
Journal:: Superlattices and microstructures
Issue:: Volume 117(2018)
Page Start:: 132
Record Type:: Journal Article
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