Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs*Project supported by the National Natural Science Foundation of China (No. 61275107). (August 2015)

• Record Type: Journal Article
• Authors: Wang, Zhiming; Zhao, Zhuobin; Hu, Zhifu; Huang, Hui; Cui, Yuxing; Sun, Xiguo; Mo, Jianghui; Li, Liang; Fu, Xingchang; Lü, Xin
• Is Part Of: Journal of semiconductors. Volume 36:Number 8(2015:Aug.)
• Page Start: 24
• Publication Date: 2015-08
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/8/084002
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>83-nm T-shaped gate InP-based In_0.52Al_0.48As/In_0.65Ga_0.35As pseudomorphic high electron mobility transistors (PHEMTs) with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density <italic>I</italic>_dss of 894 mA/mm, a maximum extrinsic transconductance <italic>g</italic>_{m; max} of 1640 mS/mm, an extrapolated cutoff frequency <italic>f</italic>_t of 247 GHz and a maximum oscillation frequency <italic>f</italic>_max of 392 GHz which were based on the measured <italic>S</italic>-parameters from 1 to 110 GHz. The minimum noise figure (NF_min) measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at <italic>V</italic>_ds of 0.8 V and <italic>I</italic>_ds of 17 mA. These results were obtained by the combination of increased InAs mole fraction in the channel, gate size scaling, parasitic reduction and the quantization channel. These excellent results make it one of the most suitable devices for millimeter wave (MMW) low noise applications.</p> </abstract>