Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz. (1st February 2015)

• Record Type: Journal Article
• Authors: Wang, Zhiming; Lü, Xin; Luo, Xiaobin; Cui, Yuxing; Sun, Xiguo; Mo, Jianghui; Fu, Xingchang; Li, Liang; He, Dawei
• Is Part Of: Journal of semiconductors. Volume 36:Number 2(2015:Feb.)
• Page Start: 024005
• Publication Date: 2015-02-01
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/2/024005
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract xml:lang="en"> <title>Abstract</title> <p>90-nm T-shaped gate InP-based In_0.52Al_0.48As/In_0.6Ga_0.4As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2 × 30 μm, a source—drain space of 2.5 μm, and a source—gate space of 0.75 μm. DC, RF and small-signal model characterizations were demonstrated. The maximum saturation current density was measured to be 755 mA/mm biased at <italic>V</italic>_gs = 0.6 V and <italic>V</italic>_ds = 1.5 V. The maximum extrinsic transconductance was measured to be 1006 mS/mm biased at <italic>V</italic>_gs = −0.1 V and <italic>V</italic>_ds = 1.5 V. The extrapolated current gain cutoff frequency and maximum oscillation frequency based on <italic>S</italic>-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz, respectively. The inflection point (the stability factor <italic>k</italic> = 1) where the slope from −10 dB/decade (MSG) to −20 dB/decade (MAG) was measured to be 83 GHz. The small-signal model of this device was also established, and the <italic>S</italic>-parameters of the model are consistent with those measured from 0.5–110 GHz.</p> </abstract>