1. (Invited) Ion Implantation into GaN and Implanted GaN Power Transistors. (21st September 2015) Authors: Nomoto, Kazuki; Takahashi, Kengo; Takuya, Oikawa; Ogawa, Hiroki; Nishimura, Tomoaki; Mishima, Tomoyoshi; Xing, Huili Grace; Nakamura, Tohru Journal: ECS transactions Issue: Volume 69:Number 11(2015) Page Start: 105 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 5.0 kV breakdown-voltage vertical GaN p–n junction diodes. (23rd February 2018) Authors: Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. An extraction method for areal forward current/voltage characteristics of circular GaN p+n diodes. (1st August 2022) Authors: Mochizuki, Kazuhiro; Ohta, Hiroshi; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 61:Number 8(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Analysis of relaxation time for nitrogen-containing species to enter steps on misoriented (0001) surfaces during homoepitaxial growth of 4H-SiC. (1st July 2022) Authors: Mochizuki, Kazuhiro; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 61:Number 7(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Analysis of step-velocity-dependent concentration of magnesium in GaN based on Burton−Cabrera−Frank theory and step-edge segregation model. (2nd December 2021) Authors: Mochizuki, Kazuhiro; Kaneda, Naoki; Hayashi, Kentaro; Ohta, Hiroshi; Horikiri, Fumimasa; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 60:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions. (15th December 2020) Authors: Mochizuki, Kazuhiro; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 60:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Breakdown phenomenon dependences on the number and positions of threading dislocations in vertical p-n junction GaN diodes. (12th February 2021) Authors: Ohta, Hiroshi; Asai, Naomi; Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy. (1st January 2023) Authors: Imabayashi, Hiroki; Yasui, Yuto; Horikiri, Fumimasa; Narita, Yoshinobu; Fukuhara, Noboru; Mishima, Tomoyoshi; Shiojima, Kenji Journal: Japanese journal of applied physics Issue: Volume 62:Number SA(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Deep-level transient spectroscopy of low-free-carrier-concentration n-GaN layers grown on freestanding GaN substrates: Dependence on carbon compensation ratio. (6th May 2016) Authors: Tanaka, Takeshi; Shiojima, Kenji; Mishima, Tomoyoshi; Tokuda, Yutaka Journal: Japanese journal of applied physics Issue: Volume 55:Number 6(2016:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates. Issue 4 (27th November 2019) Authors: Shiojima, Kenji; Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi Other Names: Shadi Shahedipour-Sandvik F. guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 257:Issue 4(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗