(Invited) Ion Implantation into GaN and Implanted GaN Power Transistors. (21st September 2015)

• Record Type: Journal Article
• Authors: Nomoto, Kazuki; Takahashi, Kengo; Takuya, Oikawa; Ogawa, Hiroki; Nishimura, Tomoaki; Mishima, Tomoyoshi; Xing, Huili Grace; Nakamura, Tohru
• Is Part Of: ECS transactions. Volume 69:Number 11(2015)
• Page Start: 105
• Page End: 112
• Publication Date: 2015-09-21
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06911.0105ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We report great possibilities of ion implantation technology for applying to high-power GaN electron devices. We demonstrated high-performance normally-off self-aligned metal gate GaN MISFETs with Si ion implantation to reduce the contact resistances for ohmic contacts and N ion implantation for the device isolation. We formed p-type GaN in n-type GaN using Mg ion implantation and observed p-n junction diode behavior on forward I-V characteristics and EL measurements.