Author/Creator: Minoura, Yuichi - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Minoura, Yuichi

1. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density. (18th March 2021)

Authors:: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Kumazaki, Yusuke; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji
Journal:: Applied physics express
Issue:: Volume 14:Number 4(2021)
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Record Type:: Journal Article
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2. GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process. (1st March 2022)

Authors:: Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Sato, Masaru; Ozaki, Shiro; Yamada, Atsushi; Kotani, Junji
Journal:: Applied physics express
Issue:: Volume 15:Number 3(2022)
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Record Type:: Journal Article
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3. High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers. Issue 4 (20th February 2023)

Authors:: Kotani, Junji; Makiyama, Kozo; Ohki, Toshihiro; Ozaki, Shiro; Okamoto, Naoya; Minoura, Yuichi; Sato, Masaru; Nakamura, Norikazu; Miyamoto, Yasuyuki
Journal:: Electronics letters
Issue:: Volume 59:Issue 4(2023)
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Record Type:: Journal Article
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4. Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates. (29th December 2020)

Authors:: Kumazaki, Yusuke; Ohki, Toshihiro; Kotani, Junji; Ozaki, Shiro; Niida, Yoshitaka; Minoura, Yuichi; Nishimori, Masato; Okamoto, Naoya; Sato, Masaru; Nakamura, Norikazu; Watanabe, Keiji
Journal:: Applied physics express
Issue:: Volume 14:Number 1(2021)
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Record Type:: Journal Article
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5. Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment. Issue 7 (3rd February 2022)

Authors:: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji
Journal:: Physica status solidi
Issue:: Volume 219:Issue 7(2022)
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Record Type:: Journal Article
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6. Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs. (9th April 2020)

Authors:: Kamada, Yoichi; Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Ohki, Toshihiro; Minoura, Yuichi; Kumazaki, Yusuke; Okamoto, Naoya; Makiyama, Kozo; Nakamura, Norikazu; Kotani, Junji
Journal:: Japanese journal of applied physics
Issue:: Volume 59:Number 4(2020)
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Record Type:: Journal Article
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