1. Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors. (August 2015) Authors: Saidi, I.; Mejri, H.; Baira, M.; Maaref, H. Journal: Superlattices and microstructures Issue: Volume 84(2015) Page Start: 113 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Modeling of polarization charge in N-face InGaN/GaN MQW solar cells. (December 2015) Authors: Belghouthi, R.; Taamalli, S.; Echouchene, F.; Mejri, H.; Belmabrouk, H. Journal: Materials science in semiconductor processing Issue: Volume 40(2015:Dec.) Page Start: 424 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Modeling of polarization charge in N-face InGaN/GaN MQW solar cells. (December 2015) Authors: Belghouthi, R.; Taamalli, S.; Echouchene, F.; Mejri, H.; Belmabrouk, H. Journal: Materials science in semiconductor processing Issue: Volume 40(2015:Dec.) Page Start: 424 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. The Excited Electronic States Calculated for Cd1−xZnxS Quantum Dots Grown by the Sol-Gel Technique. (12th April 2010) Authors: Sakly, A.; Safta, N.; Mejri, A.; Mejri, H.; Ben Lamine, A. Other Names: Yu Kui Academic Editor. Journal: Journal of nanomaterials Issue: Volume 2010(2010) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. The Excited Electronic States Calculated for Cd1−xZnxS Quantum Dots Grown by the Sol-Gel Technique. (12th May 2010) Authors: Sakly, A.; Safta, N.; Mejri, A.; Mejri, H.; Ben Lamine, A. Other Names: Yu Kui Academic Editor. Journal: Journal of nanomaterials Issue: Volume 2010(2010) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗