Author/Creator: Mejri, H. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Mejri, H.

1. Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors. (August 2015)

Authors:: Saidi, I.; Mejri, H.; Baira, M.; Maaref, H.
Journal:: Superlattices and microstructures
Issue:: Volume 84(2015)
Page Start:: 113
Record Type:: Journal Article
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2. Modeling of polarization charge in N-face InGaN/GaN MQW solar cells. (December 2015)

Authors:: Belghouthi, R.; Taamalli, S.; Echouchene, F.; Mejri, H.; Belmabrouk, H.
Journal:: Materials science in semiconductor processing
Issue:: Volume 40(2015:Dec.)
Page Start:: 424
Record Type:: Journal Article
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3. Modeling of polarization charge in N-face InGaN/GaN MQW solar cells. (December 2015)

Authors:: Belghouthi, R.; Taamalli, S.; Echouchene, F.; Mejri, H.; Belmabrouk, H.
Journal:: Materials science in semiconductor processing
Issue:: Volume 40(2015:Dec.)
Page Start:: 424
Record Type:: Journal Article
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4. The Excited Electronic States Calculated for Cd1−xZnxS Quantum Dots Grown by the Sol-Gel Technique. (12th April 2010)

Authors:: Sakly, A.; Safta, N.; Mejri, A.; Mejri, H.; Ben Lamine, A.
Other Names:: Yu Kui Academic Editor.
Journal:: Journal of nanomaterials
Issue:: Volume 2010(2010)
Page Start:
Record Type:: Journal Article
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5. The Excited Electronic States Calculated for Cd1−xZnxS Quantum Dots Grown by the Sol-Gel Technique. (12th May 2010)

Authors:: Sakly, A.; Safta, N.; Mejri, A.; Mejri, H.; Ben Lamine, A.
Other Names:: Yu Kui Academic Editor.
Journal:: Journal of nanomaterials
Issue:: Volume 2010(2010)
Page Start:
Record Type:: Journal Article
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