The Excited Electronic States Calculated for Cd1−xZnxS Quantum Dots Grown by the Sol-Gel Technique. (12th April 2010)

• Record Type: Journal Article
• Authors: Sakly, A.; Safta, N.; Mejri, A.; Mejri, H.; Ben Lamine, A.
• Other Names: Yu Kui Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2010(2010)
• Publication Date: 2010-04-12
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2010/746520
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : The present paper is aimed to investigate theoretically the quantum confinement inCd 1 − x Zn x S -related quantum dots with x the atomic fraction of Zn. For both electrons and holes, we have calculated the excited bound states with use of the spherical geometry model and assuming a finite potential at the boundary. For electrons, calculations were made by using Bessel function as an orthonormal basis. However, for holes, the confined subbands have been calculated based on squared quantum well envelope wave functions. The subband energies were evaluated for both electrons and holes versus zinc composition as well.