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3. Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern. (24th March 2017)

4. Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics. (3rd September 2018)

5. MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers (Phys. Status Solidi A 11∕2018). Issue 13 (12th July 2018)

6. MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers. Issue 13 (26th April 2018)

7. Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis. (August 2021)

8. Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters. (19th May 2022)

10. Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs. Issue 1792 (12th May 2015)