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Author/Creator McCallum, Jeffrey C.

2. Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions (Adv. Mater. 3/2022). Issue 3 (21st January 2022)

Authors:
Jakob, Alexander M.; Robson, Simon G.; Schmitt, Vivien; Mourik, Vincent; Posselt, Matthias; Spemann, Daniel; Johnson, Brett C.; Firgau, Hannes R.; Mayes, Edwin; McCallum, Jeffrey C.; Morello, Andrea; Jamieson, David N.
Journal:
Advanced materials
Issue:
Volume 34:Issue 3(2022)
Page Start:
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Record Type:
Journal Article
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3. Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions. Issue 3 (12th November 2021)

Authors:
Jakob, Alexander M.; Robson, Simon G.; Schmitt, Vivien; Mourik, Vincent; Posselt, Matthias; Spemann, Daniel; Johnson, Brett C.; Firgau, Hannes R.; Mayes, Edwin; McCallum, Jeffrey C.; Morello, Andrea; Jamieson, David N.
Journal:
Advanced materials
Issue:
Volume 34:Issue 3(2022)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

4. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities. (28th November 2011)

Authors:
McCallum, Jeffrey C.; Jamieson, David N.; Yang, Changyi; Alves, Andrew D.; Johnson, Brett C.; Hopf, Toby; Thompson, Samuel C.; van Donkelaar, Jessica A.
Other Names:
Elliman Robert G. Academic Editor.
Journal:
Advances in materials science and engineering
Issue:
Volume 2012(2012)
Page Start:
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗