Deterministic doping. (May 2017)

• Record Type: Journal Article
• Authors: Jamieson, David N.; Lawrie, William I.L.; Robson, Simon G.; Jakob, Alexander M.; Johnson, Brett C.; McCallum, Jeffrey C.
• Is Part Of: Materials science in semiconductor processing. Volume 62(2017)
• Page Start: 23
• Page End: 30
• Publication Date: 2017-05
• Subjects: Ion implantation -- Deterministic doping -- Quantum computer technology -- Dopant atoms; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.10.039
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Emerging programs in a new field of technology that employs quantum mechanical principles in engineered devices has driven new approaches to atomic-scale fabrication. Of crucial importance is the capability to configure single atoms in silicon, diamond and other materials. These engineered materials form the foundations of quantum technology which includes the fields of quantum communication and quantum computing. Quantum technology exploits quantum superposition and entanglement in potentially scalable quantum devices. To insert donor atoms in a large-scale device methods for deterministic ion implantation have been developed. These methods potentially allow the standard techniques developed for engineering materials for the Information Technology industry to be employed to make devices that exploit the new technologies. This paper reviews the emerging new technologies for deterministic doping to address the challenges of engineering atoms in the solid state.