1. Low to high-frequency noise behavior investigation of steeper sub-threshold swing NC-GeFinFET. (January 2023) Authors: Maurya, Ravindra Kumar; Saha, Rajesh; Bhowmick, Brinda Journal: Microelectronics journal Issue: Volume 131(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high Ion/Ioff. (1st May 2023) Authors: Kumar, Vivek; Maurya, Ravindra Kumar; Malvika, ; Rawat, Gopal; Mummaneni, Kavicharan Journal: Semiconductor science and technology Issue: Volume 38:Number 5(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high Ion/Ioff. (1st May 2023) Authors: Kumar, Vivek; Maurya, Ravindra Kumar; Malvika, ; Rawat, Gopal; Mummaneni, Kavicharan Journal: Semiconductor science and technology Issue: Volume 38:Number 5(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high Ion/Ioff. (1st May 2023) Authors: Kumar, Vivek; Maurya, Ravindra Kumar; Malvika, ; Rawat, Gopal; Mummaneni, Kavicharan Journal: Semiconductor science and technology Issue: Volume 38:Number 5(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high Ion/Ioff. (1st May 2023) Authors: Kumar, Vivek; Maurya, Ravindra Kumar; Malvika, ; Rawat, Gopal; Mummaneni, Kavicharan Journal: Semiconductor science and technology Issue: Volume 38:Number 5(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high Ion/Ioff. (1st May 2023) Authors: Kumar, Vivek; Maurya, Ravindra Kumar; Malvika, ; Rawat, Gopal; Mummaneni, Kavicharan Journal: Semiconductor science and technology Issue: Volume 38:Number 5(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high Ion/Ioff. (1st May 2023) Authors: Kumar, Vivek; Maurya, Ravindra Kumar; Malvika, ; Rawat, Gopal; Mummaneni, Kavicharan Journal: Semiconductor science and technology Issue: Volume 38:Number 5(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗