Low to high-frequency noise behavior investigation of steeper sub-threshold swing NC-GeFinFET. (January 2023)

• Record Type: Journal Article
• Authors: Maurya, Ravindra Kumar; Saha, Rajesh; Bhowmick, Brinda
• Is Part Of: Microelectronics journal. Volume 131(2023)
• Publication Date: 2023-01
• Subjects: Negative capacitance germanium FinFET (NC-GeFinFET) -- Steeper sub-threshold swing (SS) -- Gaussian trap -- Flicker noise -- Generation-recombination (G-R) noise -- Diffusion noise; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2022.105642
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: The role of noise effect, in presence of Gaussian-trap distribution on the negative capacitance germanium FinFET (NC-GeFinFET) by using Sentaurus-TCAD is investigated. Incorporation of ferroelectric FE-layer in NC-GeFinFET, I O N boosts by almost 18% compared to the baseline FinFET. Also steeper sub-threshold swing (SS) of 7.4 mV/decade is achieved by using the FE-layer of thickness ( t f e ) 6 nm at the room temperature. Result reports how the 1 f noise and Generation-Recombination (G-R) noise plays an important role in net drain current spectral density (net S i d ) for the proposed device up to mid frequency range, and the diffusion noise dominates in the high frequency range. This study highlights the analysis of net S i d with respect to frequency for different t f e . The minimum net S i d value 4.45 × 10 − 16 A 2 /Hz is achieved at 10 Hz, in presence of Gaussian-trap, for t f e 6 nm and is compared with the results for t f e 4 nm and 5 nm. This shows the importance of FE-layer in achieving low net S i d, especially in high frequency regime.