1. Experimental demonstration of high-gain CMOS inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs. (1st May 2022) Authors: Kawanago, Takamasa; Matsuzaki, Takahiro; Kajikawa, Ryosuke; Muneta, Iriya; Hoshii, Takuya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Experimental demonstration of high-gain CMOS inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs. (1st May 2022) Authors: Kawanago, Takamasa; Matsuzaki, Takahiro; Kajikawa, Ryosuke; Muneta, Iriya; Hoshii, Takuya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Experimental demonstration of high-gain CMOS inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs. (7th February 2022) Authors: Kawanago, Takamasa; Matsuzaki, Takahiro; Kajikawa, Ryosuke; Muneta, Iriya; Hoshii, Takuya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors. (23rd November 2020) Authors: Kawanago, Takamasa; Matsuzaki, Takahiro; Oda, Shunri Journal: Japanese journal of applied physics Issue: Volume 59:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗