Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors. (23rd November 2020)

• Record Type: Journal Article
• Authors: Kawanago, Takamasa; Matsuzaki, Takahiro; Oda, Shunri
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 12(2020)
• Publication Date: 2020-11-23
• Subjects: MoS2 -- field-effect transistor -- doping -- transferred gate dielectric; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abc6be
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: This study reposts the fabrication of top-gate molybdenum disulfide (MoS2 ) field-effect transistor (FET) by the transfer printing of a gate dielectric in conjunction with a poly(vinyl-alcohol) (PVA) coating for carrier doping. The spin-coated PVA film increases the carrier concentration in MoS2, while the back-gate MoS2 FET cannot be turned off. The transferred top-gate structure with the PVA coating makes it possible to turn off the fabricated device without permanent damage to MoS2 . The results of this study suggest interesting directions for the research and development of two-dimensional material-based functional devices.