1. 2-μm band active distributed Bragg reflector laser for CO2 gas sensing. (30th August 2019) Authors: Ueda, Yuta; Shindo, Takahiko; Kanai, Takuya; Shimokozono, Makoto; Fujiwara, Naoki; Ishii, Hiroyuki; Matsuzaki, Hideaki Journal: Applied physics express Issue: Volume 12:Number 9(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Author's reply to comments on "Predictive ability of the total score of the Kihon checklist for the incidence of functional disability in older Japanese adults: An 8‐year prospective study". Issue 11 (14th October 2022) Authors: Matsuzaki, Hideaki; Kishimoto, Hiro; Nofuji, Yu; Chen, Tao; Narazaki, Kenji Journal: Geriatrics and gerontology international Issue: Volume 22:Issue 11(2022) Page Start: 985 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Characterization of interface reaction of Ti/Al-based ohmic contacts on AlGaN/GaN epitaxial layers on GaN substrate. (21st April 2016) Authors: Zadeh, Daryoush H.; Tanabe, Shinichi; Watanabe, Noriyuki; Matsuzaki, Hideaki Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers. (19th June 2017) Authors: Hoshi, Takuya; Kashio, Norihide; Sugiyama, Hiroki; Yokoyama, Haruki; Kurishima, Kenji; Ida, Minoru; Matsuzaki, Hideaki Journal: Japanese journal of applied physics Issue: Volume 56:Number 7(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Comprehensive modeling of the extrinsic transconductance for InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors. (December 2022) Authors: Yun, Seung-Won; Jo, Hyeon-Bhin; Jeong, Hyeon-Seok; Park, Wan-Soo; Yoo, Ji-Hoon; Lee, In-Geun; Kim, Tae-Woo; Tsutsumi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hideaki; Kim, Dae-Hyun Journal: Solid-state electronics Issue: Volume 198(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effects of surface morphology and C concentration in C‐doped GaN buffer on breakdown voltage of AlGaN/GaN HEMTs on free‐standing GaN substrate. Issue 5 (12th February 2016) Authors: Tanabe, Shinichi; Watanabe, Noriyuki; Uchida, Masahiro; Matsuzaki, Hideaki Journal: Physica status solidi Issue: Volume 213:Issue 5(2016:May) Page Start: 1236 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate. (November 2022) Authors: Park, Wan-Soo; Kim, Jun-Gyu; Yun, Seung-Won; Jeong, Hyeon-Seok; Jo, Hyeon-Bhin; Kim, Tae-Woo; Tsutsumi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hideaki; Kim, Dae-Hyun Journal: Solid-state electronics Issue: Volume 197(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding. Issue 3 (29th September 2020) Authors: Yamada, Yuki; Nada, Masahiro; Uomoto, Miyuki; Shimatsu, Takehito; Nakajima, Fumito; Matsuzaki, Hideaki Other Names: Hammar Mattias guestEditor.; Hallén Anders guestEditor.; Lourdudoss Sebastian guestEditor. Journal: Physica status solidi Issue: Volume 218:Issue 3(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Imapct of selective thermal etching in mixed H2/NH3 atmosphere on crystal quality of AlGaN/GaN heterostructures. (18th February 2021) Authors: Yoshiya, Yuki; Hoshi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hideaki Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Impact of selective thermal etching in mixed H2/NH3 atmosphere on crystal quality of AlGaN/GaN heterostructures. (18th February 2021) Authors: Yoshiya, Yuki; Hoshi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hideaki Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗