Effects of surface morphology and C concentration in C‐doped GaN buffer on breakdown voltage of AlGaN/GaN HEMTs on free‐standing GaN substrate. Issue 5 (12th February 2016)

• Record Type: Journal Article
• Authors: Tanabe, Shinichi; Watanabe, Noriyuki; Uchida, Masahiro; Matsuzaki, Hideaki
• Is Part Of: Physica status solidi. Volume 213:Issue 5(2016:May)
• Page Start: 1236
• Page End: 1240
• Publication Date: 2016-02-12
• Subjects: AlGaN -- C doping -- free‐standing GaN substrates -- GaN -- high‐electron mobility transistors -- surface morphology; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532781
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : We report on the validity of using a C‐doped GaN buffer to achieve high‐breakdown‐voltage AlGaN/GaN high‐electron mobility transistors (HEMTs) on conductive free‐standing GaN substrates. We use trimethygallium to dope C into the buffer. We show that breakdown voltage depends not only on the C concentration of the buffer but also on the surface morphology of the HEMT structure. We demonstrate off‐state breakdown voltage of over 2 kV by controlling the C concentration of the buffer, thickness of the buffer, and the surface morphology.