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2. Conductive-probe atomic force microscopy and Kelvin-probe force microscopy characterization of OH-terminated diamond (111) surfaces with step-terrace structures. (18th June 2019)

4. Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer. (16th February 2018)

5. Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method. (30th October 2020)

6. High‐Rate Growth of Single‐Crystalline Diamond (100) Films by Hot‐Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 °C. Issue 21 (24th July 2019)

7. High‐Rate Growth of Single‐Crystalline Diamond (100) Films by Hot‐Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 °C. Issue 21 (7th November 2019)