High‐Rate Growth of Single‐Crystalline Diamond (100) Films by Hot‐Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 °C. Issue 21 (24th July 2019)

• Record Type: Journal Article
• Authors: Tabakoya, Taira; Kanada, Shohei; Wakui, Yusuke; Takamori, Yue; Yamada, Tatsuki; Nagai, Masatsugu; Kojima, Yoshiyasu; Ariyada, Osamu; Yamasaki, Satoshi; Nebel, Christoph E.; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio
• Other Names: Becher Christoph guestEditor.; Pobedinskas Paulius guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 21(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-07-24
• Subjects: diamond growth -- high growth rate -- hot-filament chemical vapor deposition -- tantalum filament; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900244
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Single‐crystalline (100) diamond films are grown using hot‐filament chemical vapor deposition at 3000 °C for the first time, which is achieved using tantalum filaments. A high growth rate of 10 μm h −1 is achieved, which is ≈50 times faster than that achieved at 2000 °C. The Raman spectrum of the diamond film grown at high rate shows a peak at 1333 cm −1 with a full‐width at half‐maximum of 2.8 cm −1, which is comparable with that of the seed substrate (2.7 cm −1 ). The surfaces of grown films are smooth, without hillocks or nonepitaxial crystallites. Abstract : Single‐crystalline diamond films are grown by hot‐filament chemical vapor deposition (HFCVD) with a two‐layer tantalum filament. The highest growth rate is 10 μm h −1 at 4% CH4 concentration and 3000 °C filament temperature. A smooth surface of the HFCVD diamond film with 0.45 mm thick is obtained without hillocks and nonepitaxial crystallites by a differential interference contrast (DIC) microscope.