Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer. (16th February 2018)

• Record Type: Journal Article
• Authors: Matsumoto, Tsubasa; Kato, Hiromitsu; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Yamasaki, Satoshi; Imura, Masataka; Ueda, Akihiro; Inokuma, Takao; Tokuda, Norio
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 4(2018)Supplement
• Publication Date: 2018-02-16
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.04FR01
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The electrical properties of Al2 O3 /p-type diamond (111) MOS capacitors were studied with the goal of furthering diamond-based semiconductor research. To confirm the formation of an inversion layer in the p-type diamond body, an n-type layer for use as a minority carrier injection layer was selectively deposited onto p-type diamond. To form the diamond MOS capacitors, Al2 O3 was deposited onto OH-terminated diamond using atomic layer deposition. The MOS capacitor showed clear inversion capacitance at 10 Hz. The minority carrier injection from the n-type layer reached the inversion n-channel diamond MOS field-effect transistor (MOSFET). Using the high-low frequency capacitance method, the interface state density, D it, within an energy range of 0.1–0.5 eV from the valence band edge energy, E v, was estimated at (4–9) × 10 12 cm −2 eV −1 . However, the high D it near E v remains an obstacle to improving the field effect mobility for the inversion p-channel diamond MOSFET.