1. Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination. (12th April 2019) Authors: Murotani, Hideaki; Shibuya, Kazunori; Yoneda, Ayumu; Hashiguchi, Yuki; Miyoshi, Hiroyuki; Kurai, Satoshi; Okada, Narihito; Tadatomo, Kazuyuki; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh; Yamada, Yoichi Journal: Japanese journal of applied physics Issue: Volume 58:Number SC(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates. Issue 50 (8th June 2016) Authors: Yamaoka, Yuya; Ito, Kazuhiro; Ubukata, Akinori; Tabuchi, Toshiya; Matsumoto, Koh; Egawa, Takashi Journal: MRS advances Issue: Volume 1:Issue 50(2016) Page Start: 3415 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of threading dislocation in an AlN nucleation layer and vertical leakage current in an AlGaN/GaN high-electron mobility transistor structure on a silicon substrate. (6th February 2019) Authors: Yamaoka, Yuya; Ubukata, Akinori; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh; Egawa, Takashi Journal: Semiconductor science and technology Issue: Volume 34:Number 3(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy. Issue 4 (22nd January 2020) Authors: Yamaguchi, Akira; Oozeki, Daisuke; Kawamoto, Naoya; Takekawa, Nao; Bulsara, Mayank; Murakami, Hisashi; Kumagai, Yoshinao; Matsumoto, Koh; Koukitu, Akinori Other Names: Shadi Shahedipour-Sandvik F. guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 257:Issue 4(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor. (21st April 2016) Authors: Ikenaga, Kazutada; Mishima, Akira; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. High growth rates of AlN and AlGaN on 8″ silicon wafer using metal‐organic vapor phase epitaxy reactor. Issue 11 (21st October 2013) Authors: Ubukata, Akinori; Yano, Yoshiki; Yamaoka, Yuya; Kitamura, Yuichiro; Tabuchi, Toshiya; Matsumoto, Koh; Yamaguchi, Hiroshi; Kumakura, Kazuhide Journal: Physica status solidi Issue: Volume 10:Issue 11(2013:Nov.) Page Start: 1353 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Impact of the AlN nucleation layer on the variation of the vertical‐direction breakdown voltage of AlGaN/GaN high‐electron‐mobility transistor structures on a Si substrate. Issue 8 (10th July 2017) Authors: Yamaoka, Yuya; Kakamu, Ken; Ubukata, Akinori; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh; Egawa, Takashi Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers. (December 2019) Authors: Howell-Clark, Jennifer; Guo, Zhibo; Wetzel, Christian; Chow, T. Paul; Guanxi, Piao; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh Journal: Solid-state electronics Issue: Volume 162(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template. (December 2017) Authors: Tsai, Chia-Lung; Liu, Hsueh-Hsing; Chen, Jun-Wei; Lu, Chien-Pin; Ikenaga, Kazutada; Tabuchi, Toshiya; Matsumoto, Koh; Fu, Yi-Keng Journal: Solid-state electronics Issue: Volume 138(2017) Page Start: 84 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high‐electron‐mobility transistor structures on a Si substrate. Issue 3 (31st January 2017) Authors: Yamaoka, Yuya; Kakamu, Ken; Ubukata, Akinori; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh; Egawa, Takashi Journal: Physica status solidi Issue: Volume 214:Issue 3(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗